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SI4485DY-T1-GE3 Datasheet

SI4485DY-T1-GE3 Cover
DatasheetSI4485DY-T1-GE3
File Size170.01 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI4485DY-T1-GE3
Description MOSFET P-CH 30V 6A 8-SOIC

SI4485DY-T1-GE3 - Vishay Siliconix

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URL Link

SI4485DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

42mOhm @ 5.9A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

590pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.4W (Ta), 5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)