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SI4410DY Datasheet

SI4410DY,518 Cover
DatasheetSI4410DY,518
File Size473.61 KB
Total Pages13
ManufacturerNXP
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI4410DY,518
Description MOSFET N-CH 30V SOT96-1

SI4410DY,518 - NXP

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SI4410DY,518 SI4410DY,518 NXP MOSFET N-CH 30V SOT96-1 194

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URL Link

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

13.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)