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SI4276DY-T1-E3 Datasheet

SI4276DY-T1-E3 Cover
DatasheetSI4276DY-T1-E3
File Size227.94 KB
Total Pages14
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI4276DY-T1-E3
Description MOSFET 2N-CH 30V 8A 8SO

SI4276DY-T1-E3 - Vishay Siliconix

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URL Link

SI4276DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8A

Rds On (Max) @ Id, Vgs

15.3mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1000pF @ 15V

Power - Max

3.6W, 2.8W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO