Top

SI4178DY-T1-GE3 Datasheet

SI4178DY-T1-GE3 Cover
DatasheetSI4178DY-T1-GE3
File Size209.09 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI4178DY-T1-GE3
Description MOSFET N-CH 30V 12A 8-SOIC

SI4178DY-T1-GE3 - Vishay Siliconix

SI4178DY-T1-GE3 Datasheet Page 1
SI4178DY-T1-GE3 Datasheet Page 2
SI4178DY-T1-GE3 Datasheet Page 3
SI4178DY-T1-GE3 Datasheet Page 4
SI4178DY-T1-GE3 Datasheet Page 5
SI4178DY-T1-GE3 Datasheet Page 6
SI4178DY-T1-GE3 Datasheet Page 7
SI4178DY-T1-GE3 Datasheet Page 8
SI4178DY-T1-GE3 Datasheet Page 9

The Products You May Be Interested In

SI4178DY-T1-GE3 SI4178DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 12A 8-SOIC 4081

More on Order

URL Link

SI4178DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

21mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id

2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

405pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.4W (Ta), 5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)