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SI3993CDV-T1-GE3 Datasheet

SI3993CDV-T1-GE3 Cover
DatasheetSI3993CDV-T1-GE3
File Size198.77 KB
Total Pages11
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI3993CDV-T1-GE3
Description MOSFET 2P-CH 30V 2.9A 6-TSOP

SI3993CDV-T1-GE3 - Vishay Siliconix

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SI3993CDV-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.9A

Rds On (Max) @ Id, Vgs

111mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

210pF @ 15V

Power - Max

1.4W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

6-TSOP