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SI3911DV-T1-E3 Datasheet

SI3911DV-T1-E3 Cover
DatasheetSI3911DV-T1-E3
File Size103.53 KB
Total Pages5
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI3911DV-T1-E3
Description MOSFET 2P-CH 20V 1.8A 6TSOP

SI3911DV-T1-E3 - Vishay Siliconix

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SI3911DV-T1-E3 SI3911DV-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 1.8A 6TSOP 196

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URL Link

SI3911DV-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.8A

Rds On (Max) @ Id, Vgs

145mOhm @ 2.2A, 4.5V

Vgs(th) (Max) @ Id

450mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

7.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

830mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

6-TSOP