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SI3909DV-T1-GE3 Datasheet

SI3909DV-T1-GE3 Cover
DatasheetSI3909DV-T1-GE3
File Size104.59 KB
Total Pages6
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI3909DV-T1-GE3, SI3909DV-T1-E3
Description MOSFET 2P-CH 20V 6TSOP, MOSFET 2P-CH 20V 6TSOP

SI3909DV-T1-GE3 - Vishay Siliconix

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URL Link

SI3909DV-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

200mOhm @ 1.8A, 4.5V

Vgs(th) (Max) @ Id

500mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.15W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

6-TSOP

SI3909DV-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

200mOhm @ 1.8A, 4.5V

Vgs(th) (Max) @ Id

500mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.15W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

6-TSOP