Top

SI3458BDV-T1-GE3 Datasheet

SI3458BDV-T1-GE3 Cover
DatasheetSI3458BDV-T1-GE3
File Size215.83 KB
Total Pages11
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI3458BDV-T1-GE3, SI3458BDV-T1-E3
Description MOSFET N-CH 60V 4.1A 6-TSOP, MOSFET N-CH 60V 4.1A 6-TSOP

SI3458BDV-T1-GE3 - Vishay Siliconix

SI3458BDV-T1-GE3 Datasheet Page 1
SI3458BDV-T1-GE3 Datasheet Page 2
SI3458BDV-T1-GE3 Datasheet Page 3
SI3458BDV-T1-GE3 Datasheet Page 4
SI3458BDV-T1-GE3 Datasheet Page 5
SI3458BDV-T1-GE3 Datasheet Page 6
SI3458BDV-T1-GE3 Datasheet Page 7
SI3458BDV-T1-GE3 Datasheet Page 8
SI3458BDV-T1-GE3 Datasheet Page 9
SI3458BDV-T1-GE3 Datasheet Page 10
SI3458BDV-T1-GE3 Datasheet Page 11

The Products You May Be Interested In

SI3458BDV-T1-GE3 SI3458BDV-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 4.1A 6-TSOP 15728

More on Order

SI3458BDV-T1-E3 SI3458BDV-T1-E3 Vishay Siliconix MOSFET N-CH 60V 4.1A 6-TSOP 14491

More on Order

URL Link

SI3458BDV-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

4.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

100mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 30V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 3.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6

SI3458BDV-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

4.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

100mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 30V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 3.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6