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SI3433CDV-T1-E3 Datasheet

SI3433CDV-T1-E3 Cover
DatasheetSI3433CDV-T1-E3
File Size211.21 KB
Total Pages11
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI3433CDV-T1-E3, SI3433CDV-T1-GE3
Description MOSFET P-CH 20V 6A 6TSOP, MOSFET P-CH 20V 6A 6TSOP

SI3433CDV-T1-E3 - Vishay Siliconix

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URL Link

SI3433CDV-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

38mOhm @ 5.2A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6

SI3433CDV-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

38mOhm @ 5.2A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta), 3.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6