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SI2392DS-T1-GE3 Datasheet

SI2392DS-T1-GE3 Cover
DatasheetSI2392DS-T1-GE3
File Size239.93 KB
Total Pages10
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI2392DS-T1-GE3
Description MOSFET N-CH 100V 3.1A SOT-23

SI2392DS-T1-GE3 - Vishay Siliconix

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SI2392DS-T1-GE3 SI2392DS-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 3.1A SOT-23 468

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URL Link

SI2392DS-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

126mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

196pF @ 50V

FET Feature

-

Power Dissipation (Max)

1.25W (Ta), 2.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3