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SI2365EDS-T1-GE3 Datasheet

SI2365EDS-T1-GE3 Cover
DatasheetSI2365EDS-T1-GE3
File Size233.88 KB
Total Pages10
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI2365EDS-T1-GE3
Description MOSFET P-CH 20V 5.9A TO-236

SI2365EDS-T1-GE3 - Vishay Siliconix

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SI2365EDS-T1-GE3 SI2365EDS-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 5.9A TO-236 46633

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URL Link

SI2365EDS-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

32mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1W (Ta), 1.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236

Package / Case

TO-236-3, SC-59, SOT-23-3