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SI2311DS-T1-GE3 Datasheet

SI2311DS-T1-GE3 Cover
DatasheetSI2311DS-T1-GE3
File Size103.52 KB
Total Pages5
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI2311DS-T1-GE3, SI2311DS-T1-E3
Description MOSFET P-CH 8V 3A SOT23, MOSFET P-CH 8V 3A SOT23

SI2311DS-T1-GE3 - Vishay Siliconix

SI2311DS-T1-GE3 Datasheet Page 1
SI2311DS-T1-GE3 Datasheet Page 2
SI2311DS-T1-GE3 Datasheet Page 3
SI2311DS-T1-GE3 Datasheet Page 4
SI2311DS-T1-GE3 Datasheet Page 5

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URL Link

SI2311DS-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

8V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

45mOhm @ 3.5A, 4.5V

Vgs(th) (Max) @ Id

800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

970pF @ 4V

FET Feature

-

Power Dissipation (Max)

710mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

SI2311DS-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

8V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

45mOhm @ 3.5A, 4.5V

Vgs(th) (Max) @ Id

800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

970pF @ 4V

FET Feature

-

Power Dissipation (Max)

710mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3