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SI2309DS-T1-E3 Datasheet

SI2309DS-T1-E3 Cover
DatasheetSI2309DS-T1-E3
File Size86.23 KB
Total Pages5
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI2309DS-T1-E3
Description MOSFET P-CH 60V 1.25A SOT23-3

SI2309DS-T1-E3 - Vishay Siliconix

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SI2309DS-T1-E3 SI2309DS-T1-E3 Vishay Siliconix MOSFET P-CH 60V 1.25A SOT23-3 233

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URL Link

SI2309DS-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

340mOhm @ 1.25A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.25W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3