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SI2306BDS-T1-GE3 Datasheet

SI2306BDS-T1-GE3 Cover
DatasheetSI2306BDS-T1-GE3
File Size211.9 KB
Total Pages8
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI2306BDS-T1-GE3, SI2306BDS-T1-E3
Description MOSFET N-CH 30V 3.16A SOT23-3, MOSFET N-CH 30V 3.16A SOT23-3

SI2306BDS-T1-GE3 - Vishay Siliconix

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URL Link

SI2306BDS-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.16A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

47mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.5nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

305pF @ 15V

FET Feature

-

Power Dissipation (Max)

750mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

SI2306BDS-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.16A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

47mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.5nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

305pF @ 15V

FET Feature

-

Power Dissipation (Max)

750mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3