Top

SI1972DH-T1-GE3 Datasheet

SI1972DH-T1-GE3 Cover
DatasheetSI1972DH-T1-GE3
File Size117.34 KB
Total Pages7
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI1972DH-T1-GE3, SI1972DH-T1-E3
Description MOSFET 2N-CH 30V 1.3A SC-70-6, MOSFET 2N-CH 30V 1.3A SC70-6

SI1972DH-T1-GE3 - Vishay Siliconix

SI1972DH-T1-GE3 Datasheet Page 1
SI1972DH-T1-GE3 Datasheet Page 2
SI1972DH-T1-GE3 Datasheet Page 3
SI1972DH-T1-GE3 Datasheet Page 4
SI1972DH-T1-GE3 Datasheet Page 5
SI1972DH-T1-GE3 Datasheet Page 6
SI1972DH-T1-GE3 Datasheet Page 7

The Products You May Be Interested In

SI1972DH-T1-GE3 SI1972DH-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 1.3A SC-70-6 403

More on Order

SI1972DH-T1-E3 SI1972DH-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 1.3A SC70-6 612

More on Order

URL Link

SI1972DH-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.3A

Rds On (Max) @ Id, Vgs

225mOhm @ 1.3A, 10V

Vgs(th) (Max) @ Id

2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2.8nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

75pF @ 15V

Power - Max

1.25W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-70-6 (SOT-363)

SI1972DH-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.3A

Rds On (Max) @ Id, Vgs

225mOhm @ 1.3A, 10V

Vgs(th) (Max) @ Id

2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2.8nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

75pF @ 15V

Power - Max

1.25W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-70-6 (SOT-363)