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SI1926DL-T1-GE3 Datasheet

SI1926DL-T1-GE3 Cover
DatasheetSI1926DL-T1-GE3
File Size248.57 KB
Total Pages11
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI1926DL-T1-GE3, SI1926DL-T1-E3
Description MOSFET 2N-CH 60V 0.37A SOT363, MOSFET 2N-CH 60V 0.37A SC-70-6

SI1926DL-T1-GE3 - Vishay Siliconix

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SI1926DL-T1-GE3 SI1926DL-T1-GE3 Vishay Siliconix MOSFET 2N-CH 60V 0.37A SOT363 475

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SI1926DL-T1-E3 SI1926DL-T1-E3 Vishay Siliconix MOSFET 2N-CH 60V 0.37A SC-70-6 40191

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URL Link

SI1926DL-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

370mA

Rds On (Max) @ Id, Vgs

1.4Ohm @ 340mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

18.5pF @ 30V

Power - Max

510mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-70-6 (SOT-363)

SI1926DL-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

370mA

Rds On (Max) @ Id, Vgs

1.4Ohm @ 340mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

18.5pF @ 30V

Power - Max

510mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-70-6 (SOT-363)