Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SI1551DL-T1-GE3 |
| File Size | 129.6 KB |
| Total Pages | 8 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI1551DL-T1-GE3, SI1551DL-T1-E3 |
| Description | MOSFET N/P-CH 20V SC70-6, MOSFET N/P-CH 20V SC70-6 |
SI1551DL-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SI1551DL-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V SC70-6 | 569 More on Order |
|
SI1551DL-T1-E3 | Vishay Siliconix | MOSFET N/P-CH 20V SC70-6 | 428 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 290mA, 410mA Rds On (Max) @ Id, Vgs 1.9Ohm @ 290mA, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 270mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SC-70-6 (SOT-363) |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 290mA, 410mA Rds On (Max) @ Id, Vgs 1.9Ohm @ 290mA, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 270mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SC-70-6 (SOT-363) |