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SI1539CDL-T1-GE3 Datasheet

SI1539CDL-T1-GE3 Cover
DatasheetSI1539CDL-T1-GE3
File Size242.5 KB
Total Pages16
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI1539CDL-T1-GE3
Description MOSFET N/P-CH 30V SOT363

SI1539CDL-T1-GE3 - Vishay Siliconix

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SI1539CDL-T1-GE3 SI1539CDL-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V SOT363 134176

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URL Link

SI1539CDL-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

700mA, 500mA

Rds On (Max) @ Id, Vgs

388mOhm @ 600mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

28pF @ 15V

Power - Max

340mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SOT-363