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SI1489EDH-T1-GE3 Datasheet

SI1489EDH-T1-GE3 Cover
DatasheetSI1489EDH-T1-GE3
File Size263.48 KB
Total Pages12
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI1489EDH-T1-GE3
Description MOSFET P-CH 8V 2A SOT-363

SI1489EDH-T1-GE3 - Vishay Siliconix

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SI1489EDH-T1-GE3 SI1489EDH-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 2A SOT-363 511

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URL Link

SI1489EDH-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

8V

Current - Continuous Drain (Id) @ 25°C

2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

48mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

700mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 4.5V

Vgs (Max)

±5V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

2.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-363

Package / Case

6-TSSOP, SC-88, SOT-363