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SI1413EDH-T1-GE3 Datasheet

SI1413EDH-T1-GE3 Cover
DatasheetSI1413EDH-T1-GE3
File Size109.96 KB
Total Pages6
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI1413EDH-T1-GE3, SI1413EDH-T1-E3
Description MOSFET P-CH 20V 2.3A SC-70-6, MOSFET P-CH 20V 2.3A SC70-6

SI1413EDH-T1-GE3 - Vishay Siliconix

SI1413EDH-T1-GE3 Datasheet Page 1
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SI1413EDH-T1-GE3 Datasheet Page 6

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URL Link

SI1413EDH-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

115mOhm @ 2.9A, 4.5V

Vgs(th) (Max) @ Id

450mV @ 100µA (Min)

Gate Charge (Qg) (Max) @ Vgs

8nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70-6 (SOT-363)

Package / Case

6-TSSOP, SC-88, SOT-363

SI1413EDH-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

115mOhm @ 2.9A, 4.5V

Vgs(th) (Max) @ Id

450mV @ 100µA (Min)

Gate Charge (Qg) (Max) @ Vgs

8nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70-6 (SOT-363)

Package / Case

6-TSSOP, SC-88, SOT-363