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SI1300BDL-T1-GE3 Datasheet

SI1300BDL-T1-GE3 Cover
DatasheetSI1300BDL-T1-GE3
File Size110.43 KB
Total Pages6
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI1300BDL-T1-GE3, SI1300BDL-T1-E3
Description MOSFET N-CH 20V 400MA SC-70-3, MOSFET N-CH 20V 400MA SOT323-3

SI1300BDL-T1-GE3 - Vishay Siliconix

SI1300BDL-T1-GE3 Datasheet Page 1
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SI1300BDL-T1-GE3 Datasheet Page 6

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SI1300BDL-T1-GE3 SI1300BDL-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 400MA SC-70-3 473

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SI1300BDL-T1-E3 SI1300BDL-T1-E3 Vishay Siliconix MOSFET N-CH 20V 400MA SOT323-3 270

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URL Link

SI1300BDL-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

400mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

850mOhm @ 250mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.84nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

35pF @ 10V

FET Feature

-

Power Dissipation (Max)

190mW (Ta), 200mW (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70-3

Package / Case

SC-70, SOT-323

SI1300BDL-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

400mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

850mOhm @ 250mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.84nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

35pF @ 10V

FET Feature

-

Power Dissipation (Max)

190mW (Ta), 200mW (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70-3

Package / Case

SC-70, SOT-323