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SI1035X-T1-E3 Datasheet

SI1035X-T1-E3 Cover
DatasheetSI1035X-T1-E3
File Size157.1 KB
Total Pages10
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI1035X-T1-E3, SI1035X-T1-GE3
Description MOSFET N/P-CH 20V SOT563F, MOSFET N/P-CH 20V SC-89

SI1035X-T1-E3 - Vishay Siliconix

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SI1035X-T1-GE3 SI1035X-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V SC-89 15496

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URL Link

SI1035X-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

180mA, 145mA

Rds On (Max) @ Id, Vgs

5Ohm @ 200mA, 4.5V

Vgs(th) (Max) @ Id

400mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

0.75nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

250mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SC-89-6

SI1035X-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

180mA, 145mA

Rds On (Max) @ Id, Vgs

5Ohm @ 200mA, 4.5V

Vgs(th) (Max) @ Id

400mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

0.75nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

250mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SC-89-6