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SI1025X-T1-E3 Datasheet

SI1025X-T1-E3 Cover
DatasheetSI1025X-T1-E3
File Size143.35 KB
Total Pages7
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI1025X-T1-E3, SI1025X-T1-GE3
Description MOSFET 2P-CH 60V 0.19A SOT563F, MOSFET 2P-CH 60V 0.19A SC-89

SI1025X-T1-E3 - Vishay Siliconix

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URL Link

SI1025X-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

190mA

Rds On (Max) @ Id, Vgs

4Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.7nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds

23pF @ 25V

Power - Max

250mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SC-89-6

SI1025X-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

190mA

Rds On (Max) @ Id, Vgs

4Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.7nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds

23pF @ 25V

Power - Max

250mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SC-89-6