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SH8M4TB1 Datasheet

SH8M4TB1 Cover
DatasheetSH8M4TB1
File Size181.7 KB
Total Pages6
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts SH8M4TB1
Description MOSFET N/P-CH 30V 9A/7A 8SOIC

SH8M4TB1 - Rohm Semiconductor

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SH8M4TB1

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9A, 7A

Rds On (Max) @ Id, Vgs

18mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

1190pF @ 10V

Power - Max

2W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOP