Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SFU9220TU_F080 |
| File Size | 258.46 KB |
| Total Pages | 7 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SFU9220TU_F080, SFU9220TU_AM002 |
| Description | MOSFET P-CH 200V 3.1A IPAK, MOSFET P-CH 200V 3.1A IPAK |
SFU9220TU_F080 - ON Semiconductor
The Products You May Be Interested In
 |
SFU9220TU_F080 | ON Semiconductor | MOSFET P-CH 200V 3.1A IPAK | 373 More on Order |
 |
SFU9220TU_AM002 | ON Semiconductor | MOSFET P-CH 200V 3.1A IPAK | 427 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 540pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 30W (Tc) Operating Temperature - Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 540pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 30W (Tc) Operating Temperature - Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |