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SE30PAJHM3/I Datasheet

SE30PAJHM3/I Cover
DatasheetSE30PAJHM3/I
File Size4,498.7 KB
Total Pages70
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SE30PAJHM3/I, SE50PAJHM3/I
Description DIODE GEN PURP 600V 3A DO221BC, DIODE GEN PURP 600V 5A DO221BC

SE30PAJHM3/I - Vishay Semiconductor Diodes Division

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SE30PAJHM3/I

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

eSMP®

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

3A

Voltage - Forward (Vf) (Max) @ If

1.16V @ 3A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

1.3µs

Current - Reverse Leakage @ Vr

5µA @ 600V

Capacitance @ Vr, F

13pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

DO-221BC, SMA Flat Leads Exposed Pad

Supplier Device Package

DO-221BC (SMPA)

Operating Temperature - Junction

-55°C ~ 175°C

SE50PAJHM3/I

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

eSMP®

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

5A

Voltage - Forward (Vf) (Max) @ If

1.16V @ 5A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

2µs

Current - Reverse Leakage @ Vr

10µA @ 600V

Capacitance @ Vr, F

32pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

DO-221BC, SMA Flat Leads Exposed Pad

Supplier Device Package

DO-221BC (SMPA)

Operating Temperature - Junction

-55°C ~ 175°C