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SCTWA50N120 Datasheet

SCTWA50N120 Cover
DatasheetSCTWA50N120
File Size709.9 KB
Total Pages11
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts SCTWA50N120
Description MOSFET N-CH 1200V 65A HIP247

SCTWA50N120 - STMicroelectronics

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URL Link

SCTWA50N120

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

65A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

69mOhm @ 40A, 20V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

122nC @ 20V

Vgs (Max)

+25V, -10V

Input Capacitance (Ciss) (Max) @ Vds

1900pF @ 400V

FET Feature

-

Power Dissipation (Max)

318W (Tc)

Operating Temperature

-55°C ~ 200°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

HiP247™

Package / Case

TO-247-3