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S12QR Datasheet

S12QR Cover
DatasheetS12QR
File Size775.51 KB
Total Pages3
ManufacturerGeneSiC Semiconductor
Website
Total PartsThis datasheet covers 7 part numbers
Associated Parts S12QR, S12Q, S12MR, S12M, S12KR, S12K, 1N1206A
Description DIODE GEN PURP REV 1.2KV 12A DO4, DIODE GEN PURP 1200V 12A DO4, DIODE GEN PURP REV 1KV 12A DO4, DIODE GEN PURP 1000V 12A DO4, DIODE GEN PURP REV 800V 12A DO4

S12QR - GeneSiC Semiconductor

S12QR Datasheet Page 1
S12QR Datasheet Page 2
S12QR Datasheet Page 3

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S12Q S12Q GeneSiC Semiconductor DIODE GEN PURP 1200V 12A DO4 440

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S12MR S12MR GeneSiC Semiconductor DIODE GEN PURP REV 1KV 12A DO4 366

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S12M S12M GeneSiC Semiconductor DIODE GEN PURP 1000V 12A DO4 304

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S12KR S12KR GeneSiC Semiconductor DIODE GEN PURP REV 800V 12A DO4 315

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S12K S12K GeneSiC Semiconductor DIODE GEN PURP 800V 12A DO4 166

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1N1206A 1N1206A GeneSiC Semiconductor DIODE GEN PURP 600V 12A DO4 436

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URL Link

S12QR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Standard, Reverse Polarity

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io)

12A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 12A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 50V

Capacitance @ Vr, F

-

Mounting Type

Chassis, Stud Mount

Package / Case

DO-203AA, DO-4, Stud

Supplier Device Package

DO-4

Operating Temperature - Junction

-65°C ~ 175°C

S12Q

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io)

12A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 12A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 50V

Capacitance @ Vr, F

-

Mounting Type

Chassis, Stud Mount

Package / Case

DO-203AA, DO-4, Stud

Supplier Device Package

DO-4

Operating Temperature - Junction

-65°C ~ 175°C

S12MR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Standard, Reverse Polarity

Voltage - DC Reverse (Vr) (Max)

1000V

Current - Average Rectified (Io)

12A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 12A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 50V

Capacitance @ Vr, F

-

Mounting Type

Chassis, Stud Mount

Package / Case

DO-203AA, DO-4, Stud

Supplier Device Package

DO-4

Operating Temperature - Junction

-65°C ~ 175°C

S12M

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1000V

Current - Average Rectified (Io)

12A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 12A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 50V

Capacitance @ Vr, F

-

Mounting Type

Chassis, Stud Mount

Package / Case

DO-203AA, DO-4, Stud

Supplier Device Package

DO-4

Operating Temperature - Junction

-65°C ~ 175°C

S12KR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Standard, Reverse Polarity

Voltage - DC Reverse (Vr) (Max)

800V

Current - Average Rectified (Io)

12A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 12A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 50V

Capacitance @ Vr, F

-

Mounting Type

Chassis, Stud Mount

Package / Case

DO-203AA, DO-4, Stud

Supplier Device Package

DO-4

Operating Temperature - Junction

-65°C ~ 175°C

S12K

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

800V

Current - Average Rectified (Io)

12A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 12A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 50V

Capacitance @ Vr, F

-

Mounting Type

Chassis, Stud Mount

Package / Case

DO-203AA, DO-4, Stud

Supplier Device Package

DO-4

Operating Temperature - Junction

-65°C ~ 175°C

1N1206A

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

12A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 12A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 50V

Capacitance @ Vr, F

-

Mounting Type

Chassis, Stud Mount

Package / Case

DO-203AA, DO-4, Stud

Supplier Device Package

DO-4

Operating Temperature - Junction

-65°C ~ 200°C