Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | RRH100P03TB1 |
| File Size | 2,178.74 KB |
| Total Pages | 14 |
| Manufacturer | Rohm Semiconductor |
| Website | https://www.rohm.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | RRH100P03TB1, RRH100P03GZETB |
| Description | MOSFET P-CH 30V 10A SOP8, MOSFET P-CH 30V 10A SOP8 |
RRH100P03TB1 - Rohm Semiconductor
The Products You May Be Interested In
 |
RRH100P03TB1 | Rohm Semiconductor | MOSFET P-CH 30V 10A SOP8 | 629 More on Order |
 |
RRH100P03GZETB | Rohm Semiconductor | MOSFET P-CH 30V 10A SOP8 | 4463 More on Order |
URL Link
|
Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 12.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 39nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 10V FET Feature - Power Dissipation (Max) 650mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 12.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 10V FET Feature - Power Dissipation (Max) 650mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Package / Case 8-SOIC (0.154", 3.90mm Width) |