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| Datasheet | RQK0609CQDQS#H1 |
| File Size | 125.53 KB |
| Total Pages | 10 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | RQK0609CQDQS#H1 |
| Description | MOSFET P-CH UPAK |
RQK0609CQDQS#H1 - Renesas Electronics America
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URL Link
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 100mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 5nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 470pF @ 10V FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature 150°C Mounting Type Surface Mount Supplier Device Package UPAK Package / Case TO-243AA |