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| Datasheet | RQJ0303PGDQA#H6 |
| File Size | 167.17 KB |
| Total Pages | 8 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | RQJ0303PGDQA#H6 |
| Description | MOSFET P-CH 30V 3.3A 3MPAK |
RQJ0303PGDQA#H6 - Renesas Electronics America
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Manufacturer Renesas Electronics America Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 3.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 68mOhm @ 1.6A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) +10V, -20V Input Capacitance (Ciss) (Max) @ Vds 625pF @ 10V FET Feature - Power Dissipation (Max) 800mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 3-MPAK Package / Case TO-236-3, SC-59, SOT-23-3 |