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RQA0004PXDQS#H1 Datasheet

RQA0004PXDQS#H1 Cover
DatasheetRQA0004PXDQS#H1
File Size170.7 KB
Total Pages19
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts RQA0004PXDQS#H1
Description MOSFET N-CH UPAK

RQA0004PXDQS#H1 - Renesas Electronics America

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RQA0004PXDQS#H1 RQA0004PXDQS#H1 Renesas Electronics America MOSFET N-CH UPAK 344

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URL Link

RQA0004PXDQS#H1

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

16V

Current - Continuous Drain (Id) @ 25°C

300mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

900mV @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±5V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

3W (Ta)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

UPAK

Package / Case

TO-243AA