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| Datasheet | RQ1C075UNTR |
| File Size | 2,512.3 KB |
| Total Pages | 14 |
| Manufacturer | Rohm Semiconductor |
| Website | https://www.rohm.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | RQ1C075UNTR |
| Description | MOSFET N-CH 20V 7.5A TSMT8 |
RQ1C075UNTR - Rohm Semiconductor
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RQ1C075UNTR | Rohm Semiconductor | MOSFET N-CH 20V 7.5A TSMT8 | 417 More on Order |
URL Link
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 16mOhm @ 7.5A, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 10V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TSMT8 Package / Case 8-SMD, Flat Lead |