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| Datasheet | RN1106CT(TPL3) |
| File Size | 186.88 KB |
| Total Pages | 8 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | RN1106CT(TPL3), RN1105CT(TPL3), RN1103CT(TPL3), RN1102CT(TPL3) |
| Description | TRANS PREBIAS NPN 0.05W CST3, TRANS PREBIAS NPN 0.05W CST3, TRANS PREBIAS NPN 0.05W CST3, TRANS PREBIAS NPN 0.05W CST3 |
RN1106CT(TPL3) - Toshiba Semiconductor and Storage
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 20V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) 500nA Frequency - Transition - Power - Max 50mW Mounting Type Surface Mount Package / Case SC-101, SOT-883 Supplier Device Package CST3 |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 20V Resistor - Base (R1) 2.2 kOhms Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) 500nA Frequency - Transition - Power - Max 50mW Mounting Type Surface Mount Package / Case SC-101, SOT-883 Supplier Device Package CST3 |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 20V Resistor - Base (R1) 22 kOhms Resistor - Emitter Base (R2) 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) 500nA Frequency - Transition - Power - Max 50mW Mounting Type Surface Mount Package / Case SC-101, SOT-883 Supplier Device Package CST3 |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 20V Resistor - Base (R1) 10 kOhms Resistor - Emitter Base (R2) 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) 500nA Frequency - Transition - Power - Max 50mW Mounting Type Surface Mount Package / Case SC-101, SOT-883 Supplier Device Package CST3 |