Top

RJL6012DPE-00#J3 Datasheet

RJL6012DPE-00#J3 Cover
DatasheetRJL6012DPE-00#J3
File Size78.36 KB
Total Pages7
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts RJL6012DPE-00#J3
Description MOSFET N-CH 600V 10A LDPAK

RJL6012DPE-00#J3 - Renesas Electronics America

RJL6012DPE-00#J3 Datasheet Page 1
RJL6012DPE-00#J3 Datasheet Page 2
RJL6012DPE-00#J3 Datasheet Page 3
RJL6012DPE-00#J3 Datasheet Page 4
RJL6012DPE-00#J3 Datasheet Page 5
RJL6012DPE-00#J3 Datasheet Page 6
RJL6012DPE-00#J3 Datasheet Page 7

The Products You May Be Interested In

RJL6012DPE-00#J3 RJL6012DPE-00#J3 Renesas Electronics America MOSFET N-CH 600V 10A LDPAK 532

More on Order

URL Link

RJL6012DPE-00#J3

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.1Ohm @ 5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

28nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1050pF @ 25V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-LDPAK

Package / Case

SC-83