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RJK2006DPE-00#J3 Datasheet

RJK2006DPE-00#J3 Cover
DatasheetRJK2006DPE-00#J3
File Size238.26 KB
Total Pages10
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts RJK2006DPE-00#J3
Description MOSFET N-CH 200V 40A LDPAK

RJK2006DPE-00#J3 - Renesas Electronics America

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RJK2006DPE-00#J3 RJK2006DPE-00#J3 Renesas Electronics America MOSFET N-CH 200V 40A LDPAK 550

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URL Link

RJK2006DPE-00#J3

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

40A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

59mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 25V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-LDPAK

Package / Case

SC-83