Top

RFD12N06RLESM9A Datasheet

RFD12N06RLESM9A Cover
DatasheetRFD12N06RLESM9A
File Size868.48 KB
Total Pages12
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts RFD12N06RLESM9A
Description MOSFET N-CH 60V 18A DPAK

RFD12N06RLESM9A - ON Semiconductor

RFD12N06RLESM9A Datasheet Page 1
RFD12N06RLESM9A Datasheet Page 2
RFD12N06RLESM9A Datasheet Page 3
RFD12N06RLESM9A Datasheet Page 4
RFD12N06RLESM9A Datasheet Page 5
RFD12N06RLESM9A Datasheet Page 6
RFD12N06RLESM9A Datasheet Page 7
RFD12N06RLESM9A Datasheet Page 8
RFD12N06RLESM9A Datasheet Page 9
RFD12N06RLESM9A Datasheet Page 10
RFD12N06RLESM9A Datasheet Page 11
RFD12N06RLESM9A Datasheet Page 12

The Products You May Be Interested In

RFD12N06RLESM9A RFD12N06RLESM9A ON Semiconductor MOSFET N-CH 60V 18A DPAK 4136

More on Order

URL Link

RFD12N06RLESM9A

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

63mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

485pF @ 25V

FET Feature

-

Power Dissipation (Max)

49W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252AA

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63