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RDN080N25FU6 Datasheet

RDN080N25FU6 Cover
DatasheetRDN080N25FU6
File Size54.56 KB
Total Pages4
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts RDN080N25FU6
Description MOSFET N-CH 250V 8A TO220FN

RDN080N25FU6 - Rohm Semiconductor

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RDN080N25FU6 RDN080N25FU6 Rohm Semiconductor MOSFET N-CH 250V 8A TO220FN 423

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URL Link

RDN080N25FU6

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

500mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

543pF @ 10V

FET Feature

-

Power Dissipation (Max)

35W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FN

Package / Case

TO-220-3 Full Pack