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R8010ANX Datasheet

R8010ANX Cover
DatasheetR8010ANX
File Size879.95 KB
Total Pages14
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts R8010ANX
Description MOSFET N-CH 800V 10A TO220

R8010ANX - Rohm Semiconductor

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URL Link

R8010ANX

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

560mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

62nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1750pF @ 25V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FM

Package / Case

TO-220-3 Full Pack