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QS8J11TCR Datasheet

QS8J11TCR Cover
DatasheetQS8J11TCR
File Size2,396.95 KB
Total Pages12
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts QS8J11TCR
Description MOSFET 2P-CH 12V 3.5A TSMT8

QS8J11TCR - Rohm Semiconductor

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URL Link

QS8J11TCR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate, 1.5V Drive

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

3.5A

Rds On (Max) @ Id, Vgs

43mOhm @ 3.5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

2600pF @ 6V

Power - Max

550mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

TSMT8