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PSMN3R9-60XSQ Datasheet

PSMN3R9-60XSQ Cover
DatasheetPSMN3R9-60XSQ
File Size349.84 KB
Total Pages14
ManufacturerNXP
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PSMN3R9-60XSQ
Description MOSFET N-CH 60V 75A TO-220F

PSMN3R9-60XSQ - NXP

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URL Link

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

103nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5494pF @ 25V

FET Feature

-

Power Dissipation (Max)

55W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack, Isolated Tab