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PSMN3R3-80ES Datasheet

PSMN3R3-80ES,127 Cover
DatasheetPSMN3R3-80ES,127
File Size800.02 KB
Total Pages14
ManufacturerNexperia
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PSMN3R3-80ES,127
Description MOSFET N-CH 80V 120A I2PAK

PSMN3R3-80ES,127 - Nexperia

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URL Link

PSMN3R3-80ES,127

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

139nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9961pF @ 40V

FET Feature

-

Power Dissipation (Max)

338W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA