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PSMN130-200D Datasheet

PSMN130-200D,118 Cover
DatasheetPSMN130-200D,118
File Size899.22 KB
Total Pages12
ManufacturerNexperia
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PSMN130-200D,118
Description MOSFET N-CH 200V 20A DPAK

PSMN130-200D,118 - Nexperia

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PSMN130-200D,118 PSMN130-200D,118 Nexperia MOSFET N-CH 200V 20A DPAK 11332

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PSMN130-200D,118

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2470pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63