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PSMN069-100YS Datasheet

PSMN069-100YS,115 Cover
DatasheetPSMN069-100YS,115
File Size823.81 KB
Total Pages15
ManufacturerNexperia
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PSMN069-100YS,115
Description MOSFET N-CH LFPAK

PSMN069-100YS,115 - Nexperia

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PSMN069-100YS,115 PSMN069-100YS,115 Nexperia MOSFET N-CH LFPAK 63159

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URL Link

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

72.4mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

645pF @ 50V

FET Feature

-

Power Dissipation (Max)

56W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669