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| Datasheet | PMXB65UPEZ |
| File Size | 732.98 KB |
| Total Pages | 15 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PMXB65UPEZ |
| Description | MOSFET P-CH 12V 3.2A DFN1010D-3G |
PMXB65UPEZ - Nexperia
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URL Link
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Manufacturer Nexperia USA Inc. Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 72mOhm @ 3.2A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 634pF @ 6V FET Feature - Power Dissipation (Max) 317mW (Ta), 8.33W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DFN1010D-3 Package / Case 3-XDFN Exposed Pad |