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PMV31XN Datasheet

PMV31XN,215 Cover
DatasheetPMV31XN,215
File Size595.75 KB
Total Pages15
ManufacturerNXP
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PMV31XN,215
Description MOSFET N-CH 20V 5.9A SOT-23

PMV31XN,215 - NXP

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PMV31XN,215 PMV31XN,215 NXP MOSFET N-CH 20V 5.9A SOT-23 227

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URL Link

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

37mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

5.8nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

410pF @ 20V

FET Feature

-

Power Dissipation (Max)

280mW (Tj)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB (SOT23)

Package / Case

TO-236-3, SC-59, SOT-23-3