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PMG45UN Datasheet

PMG45UN,115 Cover
DatasheetPMG45UN,115
File Size317.94 KB
Total Pages14
ManufacturerNXP
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PMG45UN,115
Description MOSFET N-CH 20V 3A SOT363

PMG45UN,115 - NXP

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PMG45UN,115 PMG45UN,115 NXP MOSFET N-CH 20V 3A SOT363 304

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URL Link

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

55mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3.3nC @ 4.5V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

184pF @ 10V

FET Feature

-

Power Dissipation (Max)

375mW (Ta), 4.35W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSSOP

Package / Case

6-TSSOP, SC-88, SOT-363