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PMDPB58UPE Datasheet

PMDPB58UPE,115 Cover
DatasheetPMDPB58UPE,115
File Size702.24 KB
Total Pages14
ManufacturerNexperia
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PMDPB58UPE,115
Description MOSFET 2P-CH 20V 3.6A HUSON6

PMDPB58UPE,115 - Nexperia

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PMDPB58UPE,115 PMDPB58UPE,115 Nexperia MOSFET 2P-CH 20V 3.6A HUSON6 11448

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URL Link

PMDPB58UPE,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.6A

Rds On (Max) @ Id, Vgs

67mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

804pF @ 10V

Power - Max

515mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-UDFN Exposed Pad

Supplier Device Package

6-HUSON-EP (2x2)