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PMCM650VNE/S500Z Datasheet

PMCM650VNE/S500Z Cover
DatasheetPMCM650VNE/S500Z
File Size735.77 KB
Total Pages15
ManufacturerNexperia
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts PMCM650VNE/S500Z, PMCM650VNEZ
Description MOSFET N-CH 12V 8.4A 6WLCSP, MOSFET N-CH 12V 4WLCSP

PMCM650VNE/S500Z - Nexperia

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URL Link

PMCM650VNE/S500Z

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

8.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

25mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15.4nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1060pF @ 6V

FET Feature

-

Power Dissipation (Max)

12.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-WLCSP (1.48x.98)

Package / Case

6-XFBGA, WLCSP

PMCM650VNEZ

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

6.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V

Rds On (Max) @ Id, Vgs

25mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15.4nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1060pF @ 6V

FET Feature

-

Power Dissipation (Max)

556mW (Ta), 12.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-WLCSP (1.48x.98)

Package / Case

6-XFBGA, WLCSP