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| Datasheet | PHU66NQ03LT,127 |
| File Size | 89.32 KB |
| Total Pages | 13 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | PHU66NQ03LT,127, PHP66NQ03LT,127 |
| Description | MOSFET N-CH 25V 66A SPT533, MOSFET N-CH 25V 66A TO220AB |
PHU66NQ03LT,127 - NXP
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 66A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 10.5mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V FET Feature - Power Dissipation (Max) 93W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 66A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 10.5mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V FET Feature - Power Dissipation (Max) 93W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |